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| PNP Silicon Switching Transistor High current gain: 0.1 mA to 500 mA q Low collector-emitter saturation voltage q SXT 2907 A Type SXT 2907 A Marking 2F Ordering Code (tape and reel) Q68000-A8300 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 120 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 60 60 5 600 1 150 - 65 ... + 150 Unit V mA W C 90 30 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXT 2907 A Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 10 A Collector-base cutoff current VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 125 C Collector cutoff current VCE = 30 V, VBE = 0.5 V Emitter-base cutoff current VEB = 3 V, IC = 0 Base cutoff current VCE = 30 V, VBE = 3 V DC current gain IC = 100 A, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 - - ICEX IEB0 IBL hFE 75 100 100 100 50 VCEsat - - VBEsat - - - - 1.3 2.0 - - 0.4 1.6 - - - - - - - - 300 - V - - - - - - - - 10 10 50 10 50 - nA A Values typ. max. Unit 60 60 5 - - - - - - V nA 1) Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 SXT 2907 A Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 50 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VEB = 2 V, f = 1 MHz Switching times VCC = 30 V, VBE = 0.5 V, IC = 150 mA, IB1 = 15 mA VCC = 6 V, IC = 150 mA, IB1 = IB2 = 15 mA Test circuits Delay and rise time fT Cobo Cibo 200 - - - - - - 8 30 MHz pF Values typ. max. Unit td tr ts tf - - - - - - - - 10 40 80 30 ns ns ns ns Storage and fall time Semiconductor Group 3 SXT 2907 A Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance Ccb = f (VCB) f = 1 MHz Permissible pulse load Ptot max / Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 20 V Semiconductor Group 4 SXT 2907 A Saturation voltage IC = f (VBE sat, VCE sat) hFE = 10 Delay time td = f (IC) Rise time tr = f (IC) hFE = 10 Storage time ts = f (IC) Fall time tf = f (IC) Semiconductor Group 5 SXT 2907 A DC current gain hFE = f (IC) Semiconductor Group 6 |
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